features low cost diffus ed junction low leakage low forward voltage drop high current capability mechanical data cas e:jedec do--41,m olded plas tic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.012ounces,0.34 grams mounting pos ition: any ratings at 25 ambient temperature unless otherwise specified. single phas e,half wave,60 hz,res is tive or inductive load. for capacitive load,derate by 20%. units maximum recurrent peak reverse voltage v rrm v ma x imu m rms v olt a ge v rms v ma x imu m dc blo c kin g v olt ag e v dc v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 0.5a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 typical thermal resistance (note1) r ja /w typical junction capacitance (note2) c j pf operating junction temperature range t j storage temperature range t stg - 55 ---- + 150 note: 1. thermal resistance from junction to ambient. 5 0 . 0 - 55 ---- + 150 a 5.0 easily cleaned with alcohol,isopropanol and s im ilar s olvents i f(av) 0.5 maximum ratings and electrical characteristics the plastic material carries u/l recognition 94v-0 r1200 r1500 1200 1500 1800 2000 a a 30.0 i fsm i r 35 15 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. 2.0 1260 2000 1400 1200 840 1500 1050 r1800 R2000 1800 r1200--- R2000 high volt age rect ifiers voltage range: 1200 --- 2000 v current: 0.5 a do - 41 diode semiconductor korea www.diode.kr
amperes amperes amperes capacitance,pf instantaneous forward current fi g. 3 -- peak forward surge current fi g. 4 -- typi cal juncti on capaci tance reverse voltage,volts number of cycles at 60hz fi g. 1 -- forward derati ng curve fi g. 2 -- typi cal forward characteri sti cs r1200 ---r 2000 ambient temperature, instantaneous forward voltage, volts peak forward surge current average forward rectified current 1 . 6 2 . 6 0 . 01 0 . 1 1 . 0 10 3 . 6 t j =25 pulse width=300 s 4 . 6 0 . 6 0 100 1 10 100 10 4 t j =25 10 100 t j =125 8.3ms single half sine - wave 30 20 10 1 0 0 0 .1 25 50 75 1 0 0 1 2 5 1 5 0 single phase half wave 60h z resistive or inductive load 0 .2 2 0 01 7 5 0 .3 0 .4 0 .5 www.diode.kr diode semiconductor korea
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